The present invention relates to a device that enables the in-situ deposition of materials at different growth angles from a single evaporation source. The oblique-angle growth of thin-film materials facilitated by this device is based on physical vapor deposition (PVD) processes and is achieved by gradually varying the orientation angle of the substrate surface relative to the material flow from the evaporation source. This device allows for the modification of the growth structure of various materials at the nanoscale and microscale, opening the possibility of studying the influence of these microstructures on the mechanical, optical, thermal, electrochemical, and other properties of thin-film materials.